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1

Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

Singisetti, Uttam, Wong, Man Hoi, Dasgupta, Sansaptak, Nidhi,, Swenson, Brian, Thibeault, Brian J., Speck, James S., Mishra, Umesh K.

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 421 KB

english, 2011

2

1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs

Zeng, Ke, Vaidya, Abhishek, Singisetti, Uttam

Journal:

IEEE Electron Device Letters

Année:

2018

Langue:

english

Fichier:

PDF, 1.31 MB

english, 2018

3

[IEEE 2018 76th Device Research Conference (DRC) - Santa Barbara, CA, USA (2018.6.24-2018.6.27)] 2018 76th Device Research Conference (DRC) - 710 V Breakdown Voltage in Field Plated Ga203 MOSFET

Zeng, Ke, Vaidya, Abhishek, Singisetti, Uttam

Année:

2018

Langue:

english

Fichier:

PDF, 1.68 MB

english, 2018

4

High-performance N-polar GaN enhancement-mode device technology

Singisetti, Uttam, Wong, Man Hoi, Mishra, Umesh K

Journal:

Semiconductor Science and Technology

Année:

2013

Langue:

english

Fichier:

PDF, 2.77 MB

english, 2013

5

Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$, and 0.66-$\Omega\cdot \hbox{mm}$$R_{\rm on}$

Singisetti, Uttam, Wong, Man Hoi, Speck, James S., Mishra, Umesh K.

Journal:

IEEE Electron Device Letters

Année:

2012

Langue:

english

Fichier:

PDF, 366 KB

english, 2012

6

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

Jia, Ye, Wallace, Joshua S., Qin, Yueling, Gardella, Joseph A., Dabiran, Amir M., Singisetti, Uttam

Journal:

Journal of Electronic Materials

Année:

2016

Langue:

english

Fichier:

PDF, 1.31 MB

english, 2016

7

Characterization and Modeling of Co/BaTiO₃/SrRuO₃ Ferroelectric Tunnel Junction Memory by Capacitance-Voltage (C-V), Current-Voltage (I-V), and High-Frequency Measurements

Abuwasib, Mohammad, Lee, Hyungwoo, Lee, Jung-Woo, Eom, Chang-Beom, Gruverman, Alexei, Singisetti, Uttam

Journal:

IEEE Transactions on Electron Devices

Année:

2019

Langue:

english

Fichier:

PDF, 2.30 MB

english, 2019

8

[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown $\beta$-Ga 2 O 3

Sharma, Shivam, Zeng, Ke, Vaidya, Abhishek, Singisetti, Uttam

Année:

2019

Fichier:

PDF, 643 KB

2019

9

Reaction enthalpies as selection criteria for tribological coatings

N. Ooi, James B. Adams, Uttam Singisetti

Journal:

physica status solidi (b)

Année:

2003

Langue:

english

Fichier:

PDF, 87 KB

english, 2003

10

InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Uttam Singisetti, Mark A. Wistey, Gregory J. Burek, Erdem Arkun, Ashish K. Baraskar, Yanning Sun, Edward W. Kiewra, Brian J. Thibeault, Arthur C. Gossard, Chris J. Palmstrøm, Mark J. W. Rodwell

Journal:

physica status solidi (c)

Année:

2009

Langue:

english

Fichier:

PDF, 718 KB

english, 2009

11

Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors

Wong, Man Hoi, Singisetti, Uttam, Lu, Jing, Speck, James S., Mishra, Umesh K.

Journal:

IEEE Transactions on Electron Devices

Année:

2012

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2012

12

N-polar GaN epitaxy and high electron mobility transistors

Wong, Man Hoi, Keller, Stacia, Dasgupta, Nidhi, Sansaptak, Denninghoff, Daniel J, Kolluri, Seshadri, Brown, David F, Lu, Jing, Fichtenbaum, Nicholas A, Ahmadi, Elaheh, Singisetti, Uttam, Chini, Alessa

Journal:

Semiconductor Science and Technology

Année:

2013

Langue:

english

Fichier:

PDF, 3.31 MB

english, 2013

13

Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs

Nidhi,, Dasgupta, Sansaptak, Brown, David F., Singisetti, Uttam, Keller, Stacia, Speck, James S., Mishra, Umesh K.

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 358 KB

english, 2011

14

Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz

Singisetti, Uttam, Wong, Man Hoi, Dasgupta, Sansaptak, Speck, James S., Mishra, Umesh K.

Journal:

Applied Physics Express

Année:

2011

Langue:

english

Fichier:

PDF, 1.81 MB

english, 2011

15

Ultralow resistance in situ Ohmic contacts to InGaAs/InP

Singisetti, Uttam, Wistey, Mark A., Zimmerman, Jeramy D., Thibeault, Brian J., Rodwell, Mark J. W., Gossard, Arthur C., Bank, Seth R.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 315 KB

english, 2008

16

[IEEE 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Takamatsu, Japan (2010.05.31-2010.06.4)] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - High doping effects on in-situ Ohmic contacts to n-InAs

Baraskar, Ashish, Jain, Vibhor, Wistey, Mark A., Singisetti, Uttam, Lee, Yong Ju, Thibeault, Brian, Gossard, Arthur, Rodwell, Mark J. W.

Année:

2010

Langue:

english

Fichier:

PDF, 145 KB

english, 2010

17

[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - Anomalous output conductance in N-polar GaN-based MIS-HEMTs

Wong, Man Hoi, Singisetti, Uttam, Lu, Jing, Speck, James S., Mishra, Umesh K.

Année:

2011

Langue:

english

Fichier:

PDF, 939 KB

english, 2011

18

[IEEE 2009 67th Annual Device Research Conference (DRC) - University Park, PA, USA (2009.06.22-2009.06.24)] 2009 Device Research Conference - 0.37 mS/μm In0.53Ga0.47As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain

Singisetti, Uttam, Wistey, Mark A., Burek, Greg J., Baraskar, Ashish K., Cagnon, Joel, Thibeault, Brian J., Stemmer, Susanne, Gossa, Arthur C., Rodwell, Mark J.W., Kim, Eunji, Shin, Byungha, McIntyre,

Année:

2009

Langue:

english

Fichier:

PDF, 404 KB

english, 2009

19

[IEEE Related Materials (IPRM) - Newport Beach, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Conference on Indium Phosphide & Related Materials - Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth

Singisetti, Uttam, Wistey, Mark A., Burek, Gregory J., Baraskar, Ashish K., Cagnon, Joel, Thibeault, Brian, Gossard, Arthur C., Stemmer, Susanne, Rodwell, Mark J.W., Eunji Kim,, Byungha Shin,, McInt

Année:

2009

Langue:

english

Fichier:

PDF, 418 KB

english, 2009

20

[IEEE Related Materials (IPRM) - Newport Beach, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Conference on Indium Phosphide & Related Materials - Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs

Jain, Vibhor, Baraskar, Ashish K., Wistey, Mark A., Singisetti, Uttam, Griffith, Zach, Lobisser, Evan, Thibeault, Brian J., Gossard, Arthur. C., Rodwell, Mark. J. W.

Année:

2009

Langue:

english

Fichier:

PDF, 384 KB

english, 2009

21

[IEEE 2010 68th Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2010.06.21-2010.06.23)] 68th Device Research Conference - Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth

Singisetti, Uttam, Wong, Man Hoi, Dasgupta, Sansaptak, Nidhi,, Swenson, Brian L., Thibeault, Brian J., Speck, James S., Mishra, Umesh K.

Année:

2010

Langue:

english

Fichier:

PDF, 542 KB

english, 2010

22

Interface roughness scattering in ultra-thin N-polar GaN quantum well channels

Singisetti, Uttam, Hoi Wong, Man, Mishra, Umesh K.

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 909 KB

english, 2012

23

ErAs epitaxial Ohmic contacts to InGaAs/InP

Singisetti, Uttam, Zimmerman, Jeramy D., Wistey, Mark A., Cagnon, Joël, Thibeault, Brian J., Rodwell, Mark J. W., Gossard, Arthur C., Stemmer, Susanne, Bank, Seth R.

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 293 KB

english, 2009

24

Control of InGaAs and InAs facets using metal modulation epitaxy

Wistey, Mark A., Baraskar, Ashish K., Singisetti, Uttam, Burek, Greg J., Shin, Byungha, Kim, Eunji, McIntyre, Paul C., Gossard, Arthur C., Rodwell, Mark J. W.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Année:

2015

Langue:

english

Fichier:

PDF, 1.27 MB

english, 2015

25

[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - III-V/Ge Channel Engineering for Future CMOS

Wistey, Mark, Singisetti, Uttam, Burek, Greg, Kim, Eunji, Thibeault, Brian J., Nelson, Austin, Cagnon, Joël, Lee, Yong-Ju, Bank, Seth R., Stemmer, Susanne, McIntyre, Paul C., Gossard, Arthur C., Rodw

Année:

2009

Langue:

english

Fichier:

PDF, 851 KB

english, 2009

26

Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01)

Jia, Ye, Zeng, Ke, Wallace, Joshua S., Gardella, Joseph A, Singisetti, Uttam

Journal:

Applied Physics Letters

Année:

2015

Langue:

english

Fichier:

PDF, 1.55 MB

english, 2015

27

RF Performance and Avalanche Breakdown Analysis of InN Tunnel FETs

Ghosh, Krishnendu, Singisetti, Uttam

Journal:

IEEE Transactions on Electron Devices

Année:

2014

Langue:

english

Fichier:

PDF, 1.58 MB

english, 2014

28

Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

Ghosh, Krishnendu, Singisetti, Uttam

Journal:

Journal of Applied Physics

Année:

2015

Langue:

english

Fichier:

PDF, 1.72 MB

english, 2015

29

[IEEE 2015 73rd Annual Device Research Conference (DRC) - Columbus, OH, USA (2015.6.21-2015.6.24)] 2015 73rd Annual Device Research Conference (DRC) - CMOS compatible integrated ferroelectric tunnel junctions (FTJ)

Abuwasib, Mohammad, Lee, Hyungwoo, Sharma, Pankaj, Eom, Chang-Beom, Gruverman, Alexei, Singisetti, Uttam

Année:

2015

Langue:

english

Fichier:

PDF, 818 KB

english, 2015

30

[IEEE 2013 71st Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2013.06.23-2013.06.26)] 71st Device Research Conference - A 50 nm gate length InN tri-gate FET design with gm of 1.07 mS/μm and ft of 495 GHz

Ghosh, Krishnendu, Singisetti, Uttam

Année:

2013

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2013

31

Interface State Density in Atomic Layer Deposited SiO2/β-Ga2O3 (̅201) MOSCAPs

Zeng, Ke, Jia, Ye, Singisetti, Uttam

Journal:

IEEE Electron Device Letters

Année:

2016

Langue:

english

Fichier:

PDF, 549 KB

english, 2016

32

Atomic Layer Deposition of Hafnium(IV) Oxide on Graphene Oxide: Probing Interfacial Chemistry and Nucleation by using X-ray Absorption and Photoelectron Spectroscopies

Alivio, Theodore E. G., De Jesus, Luis R., Dennis, Robert V., Jia, Ye, Jaye, Cherno, Fischer, Daniel A., Singisetti, Uttam, Banerjee, Sarbajit

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 1.44 MB

english, 2015

33

[IEEE 2016 74th Annual Device Research Conference (DRC) - Newark, DE, USA (2016.6.19-2016.6.22)] 2016 74th Annual Device Research Conference (DRC) - Depletion and enhancement mode β-Ga2O3 MOSFETs with ALD SiO2 gate and near 400 V breakdown voltage

Zeng, Ke, Sasaki, K., Kuramata, A., Masui, T., Singisetti, Uttam

Année:

2016

Fichier:

PDF, 548 KB

2016

34

Contact resistance to SrRuO 3 and La 0.67 Sr 0.33 MnO 3 epitaxial films

Abuwasib, Mohammad, Lee, Hyungwoo, Gruverman, Alexei, Eom, Chang-Beom, Singisetti, Uttam

Journal:

Applied Physics Letters

Année:

2015

Langue:

english

Fichier:

PDF, 608 KB

english, 2015

35

Ab initio calculation of electron–phonon coupling in monoclinic β-Ga 2 O 3 crystal

Ghosh, Krishnendu, Singisetti, Uttam

Journal:

Applied Physics Letters

Année:

2016

Langue:

english

Fichier:

PDF, 1.22 MB

english, 2016

36

Interface characterization of atomic layer deposited Al 2 O 3 on m-plane GaN

Jia, Ye, Wallace, Joshua S., Echeverria, Elena, Gardella, Joseph A., Singisetti, Uttam

Journal:

physica status solidi (b)

Année:

2017

Langue:

english

Fichier:

PDF, 1.95 MB

english, 2017

37

Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

Abuwasib, Mohammad, Lu, Haidong, Li, Tao, Buragohain, Pratyush, Lee, Hyungwoo, Eom, Chang-Beom, Gruverman, Alexei, Singisetti, Uttam

Journal:

Applied Physics Letters

Année:

2016

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2016

38

Thermoelectric transport coefficients in mono-layer MoS 2 and WSe 2 : Role of substrate, interface phonons, plasmon, and dynamic screening

Ghosh, Krishnendu, Singisetti, Uttam

Journal:

Journal of Applied Physics

Année:

2015

Langue:

english

Fichier:

PDF, 2.92 MB

english, 2015

39

Ga 2 O 3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology

Zeng, Ke, Wallace, Joshua S., Heimburger, Christopher, Sasaki, Kohei, Kuramata, Akito, Masui, Takekazu, Gardella, Joseph A., Singisetti, Uttam

Journal:

IEEE Electron Device Letters

Année:

2017

Langue:

english

Fichier:

PDF, 1.14 MB

english, 2017

40

Sub-100 nm integrated ferroelectric tunnel junction devices using hydrogen silsesquioxane planarization

Abuwasib, Mohammad, Lee, Jung-Woo, Lee, Hyungwoo, Eom, Chang-Beom, Gruverman, Alexei, Singisetti, Uttam

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Année:

2017

Langue:

english

Fichier:

PDF, 1.25 MB

english, 2017

41

Electrical characterization of atomic layer deposited Al 2 O 3 /InN interfaces

Jia, Ye, Dabiran, Amir M., Singisetti, Uttam

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Année:

2016

Langue:

english

Fichier:

PDF, 2.51 MB

english, 2016

42

Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

Kim, Munho, Seo, Jung-Hun, Singisetti, Uttam, Ma, Zhenqiang

Journal:

Journal of Materials Chemistry C

Année:

2017

Langue:

english

Fichier:

PDF, 3.98 MB

english, 2017

43

Ab initio velocity-field curves in monoclinic β-Ga 2 O 3

Ghosh, Krishnendu, Singisetti, Uttam

Journal:

Journal of Applied Physics

Année:

2017

Langue:

english

Fichier:

PDF, 1.32 MB

english, 2017

44

Interface characterization of atomic layer deposited high-k on non-polar GaN

Jia, Ye, Zeng, Ke, Singisetti, Uttam

Journal:

Journal of Applied Physics

Année:

2017

Langue:

english

Fichier:

PDF, 2.19 MB

english, 2017

45

Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement

Ghosh, Krishnendu, Singisetti, Uttam

Journal:

Journal of Materials Research

Année:

2017

Langue:

english

Fichier:

PDF, 535 KB

english, 2017

46

[IEEE 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, OH (2017.10.1-2017.10.5)] 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Modeling and power loss evaluation of ultra wide band gap Ga2O3 device for high power applications

Lee, Inhwan, Kumar, Avinash, Zeng, Ke, Singisetti, Uttam, Yao, Xiu

Année:

2017

Langue:

english

Fichier:

PDF, 513 KB

english, 2017

47

[IEEE 2017 IEEE 5th Workshop on Wide-Bandgap Power Devices and Applications (WiPDA) - Albuquerque, NM (2017.10.30-2017.11.1)] 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Mixed-mode circuit simulation to characterize Ga2O3 MOSFETs in different device structures

Lee, Inhwan, Kumar, Avinash, Zeng, Ke, Singisetti, Uttam, Yao, Xiu

Année:

2017

Langue:

english

Fichier:

PDF, 743 KB

english, 2017

48

Erratum: “ Ab initio calculation of electron-phonon coupling in monoclinic β-Ga 2 O 3 crystal” [Appl. Phys. Lett. 109 , 072102 (2016)]

Ghosh, Krishnendu, Singisetti, Uttam

Journal:

Applied Physics Letters

Année:

2016

Langue:

english

Fichier:

PDF, 219 KB

english, 2016

49

Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor

Dowben, Peter A., Binek, Christian, Zhang, Kai, Wang, Lu, Mei, Wai-Ning, Bird, Jonathan P., Singisetti, Uttam, Hong, Xia, Wang, Kang L., Nikonov, Dmitri

Journal:

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Année:

2018

Langue:

english

Fichier:

PDF, 9.29 MB

english, 2018

50

Assessment of phonon scattering - related mobility in β-Ga2O3

Parisini, Antonella, Ghosh, Krishnendu, Singisetti, Uttam, Fornari, Roberto

Journal:

Semiconductor Science and Technology

Année:

2018

Langue:

english

Fichier:

PDF, 1.34 MB

english, 2018